general description glass passivated triacs in a plastic symbol parameter max. max. max. unit envelope, intended for use in applications requiring high bt139- 500 600 800 bidirectional transient and blocking bt139- 500f 600f 800f voltage capability and high thermal bt139- 500g 600g 800g cycling performance. typical drm repetitive peak off-state 500 600 800 v applications include motor control, industrial and domestic lighting, t(rms) rms on-state current 16 16 16 a heating and static switching. tsm non-repetitive peak on-state 140 140 140 a current to220ab limiting values limiting values in accordance with the absolute maximum system (iec 134). symbol parameter conditions min. max. unit -500 -600 -800 v drm repetitive peak off-state - 500 1 600 1 800 v voltages i t(rms) rms on-state current full sine wave; t mb 99 ?c - 16 a i tsm non-repetitive peak full sine wave; t j = 25 ?c prior to on-state current surge t = 20 ms - 140 a t = 16.7 ms - 150 a i 2 ti 2 t for fusing t = 10 ms - 98 a 2 s di t /dt repetitive rate of rise of i tm = 20 a; i g = 0.2 a; on-state current after di g /dt = 0.2 a/ m s triggering t2+ g+ - 50 a/ m s t2+ g- - 50 a/ m s t2- g- - 50 a/ m s t2- g+ - 10 a/ m s i gm peak gate current - 2 a v gm peak gate voltage - 5 v p gm peak gate power - 5 w p g(av) average gate power over any 20 ms period - 0.5 w t stg storage temperature -40 150 ?c t j operating junction - 125 ?c temperature t1 t2 g 1 although not recommended, off-state voltages up to 800v may be applied without damage, but the triac may switch to the on-state. the rate of rise of current should not exceed 15 a/ m s. quick reference data symbol voltages v i i bt139 series 2014-6-11 1 www.kersemi.com
thermal resistances symbol parameter conditions min. typ. max. unit r th j-mb thermal resistance full cycle - - 1.2 k/w junction to mounting base half cycle - - 1.7 k/w r th j-a thermal resistance in free air - 60 - k/w junction to ambient static characteristics t j = 25 ?c unless otherwise stated symbol parameter conditions min. typ. max. unit bt139- ... ...f ...g i gt gate trigger current v d = 12 v; i t = 0.1 a t2+ g+ - 5 35 25 50 ma t2+ g- - 8 35 25 50 ma t2- g- - 10 35 25 50 ma t2- g+ - 22 70 70 100 ma i l latching current v d = 12 v; i gt = 0.1 a t2+ g+ - 7 40 40 60 ma t2+ g- - 20 60 60 90 ma t2- g- - 8 40 40 60 ma t2- g+ - 10 60 60 90 ma i h holding current v d = 12 v; i gt = 0.1 a - 6 30 30 60 ma v t on-state voltage i t = 20 a - 1.2 1.6 v v gt gate trigger voltage v d = 12 v; i t = 0.1 a - 0.7 1.5 v v d = 400 v; i t = 0.1 a; 0.25 0.4 - v t j = 125 ?c i d off-state leakage current v d = v drm(max) ; - 0.1 0.5 ma t j = 125 ?c dynamic characteristics t j = 25 ?c unless otherwise stated symbol parameter conditions min. typ. max. unit bt139- ... ...f ...g dv d /dt critical rate of rise of v dm = 67% v drm(max) ; 100 50 200 250 - v/ m s off-state voltage t j = 125 ?c; exponential waveform; gate open circuit dv com /dt critical rate of change of v dm = 400 v; t j = 95 ?c; - - 10 20 - v/ m s commutating voltage i t(rms) = 16 a; di com /dt = 7.2 a/ms; gate open circuit t gt gate controlled turn-on i tm = 20 a; v d = v drm(max) ;- - - 2 - m s time i g = 0.1 a; di g /dt = 5 a/ m s bt139 series 2014-6-11 2 www.kersemi.com
fig.1. maximum on-state dissipation, p tot , versus rms on-state current, i t(rms) , where a = conduction angle. fig.2. maximum permissible non-repetitive peak on-state current i tsm , versus pulse width t p , for sinusoidal currents, t p 20ms. fig.3. maximum permissible non-repetitive peak on-state current i tsm , versus number of cycles, for sinusoidal currents, f = 50 hz. fig.4. maximum permissible rms current i t(rms) , versus mounting base temperature t mb . fig.5. maximum permissible repetitive rms on-state current i t(rms) , versus surge duration, for sinusoidal currents, f = 50 hz; t mb 99?c. fig.6. normalised gate trigger voltage v gt (t j )/ v gt (25?c), versus junction temperature t j . 0 5 10 15 20 0 5 10 15 20 25 = 180 120 90 60 30 bt139 it(rms) / a ptot / w tmb(max) / c 125 119 113 107 101 95 1 -50 0 50 100 150 0 5 10 15 20 bt139 99 c tmb / c it(rms) / a 10us 100us 1ms 10ms 100ms 10 100 1000 bt139 t / s itsm / a t i tsm time i tj initial = 25 c max t di /dt limit t t2- g+ quadrant 0.01 0.1 1 10 0 10 20 30 40 50 bt139 surge duration / s it(rms) / a 1 10 100 1000 0 50 100 150 bt139 number of cycles at 50hz itsm / a t i tsm time i tj initial = 25 c max t -50 0 50 100 150 0.4 0.6 0.8 1 1.2 1.4 1.6 bt136 tj / c vgt(tj) vgt(25 c) bt139 series 2014-6-11 3 www.kersemi.com
fig.7. normalised gate trigger current i gt (t j )/ i gt (25?c), versus junction temperature t j . fig.8. normalised latching current i l (t j )/ i l (25?c), versus junction temperature t j . fig.9. normalised holding current i h (t j )/ i h (25?c), versus junction temperature t j . fig.10. typical and maximum on-state characteristic. fig.11. transient thermal impedance z th j-mb , versus pulse width t p . fig.12. typical commutation dv/dt versus junction temperature, parameter commutation di t /dt. the triac should commutate when the dv/dt is below the value on the appropriate curve for pre-commutation di t /dt. -50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 bt139 tj / c t2+ g+ t2+ g- t2- g- t2- g+ igt(tj) igt(25 c) 0 0.5 1 1.5 2 2.5 3 0 10 20 30 40 50 bt139 vt / v it / a tj = 125 c tj = 25 c typ max vo = 1.195 v rs = 0.018 ohms -50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 triac tj / c il(tj) il(25 c) 0.001 0.01 0.1 1 10 bt139 tp / s zth j-mb (k/w) 10us 0.1ms 1ms 10ms 0.1s 1s 10s t p p t d unidirectional bidirectional -50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 triac tj / c ih(tj) ih(25c) 0 50 100 150 1 10 100 1000 tj / c 9.3 dv/dt (v/us) 5.6 dicom/dt = 20 a/ms 16 off-state dv/dt limit bt139 series bt139...f series 12 7.2 bt139...g series bt139 series 2014-6-11 4 www.kersemi.com
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